2N6716 / 2n6717 / 2n6718 1a , 100v npn plastic encapsulated transistor elektronische bauelemente 18-jan-2011 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? a c e k f d b g h j rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high voltage v ceo = 100v ? gain of 20 @ i c = 0.5a absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage 2N6716 v cbo 60 v 2n6717 80 2n6718 100 collector to emitter voltage 2N6716 v ceo 60 v 2n6717 80 2n6718 100 emitter to base voltage v ebo 5 v collector current - continuous i c 1 a collector power dissipation p d 1 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage 2N6716 v (br)cbo 60 - - v i c =100 a, i e =0 2n6717 80 - - 2n6718 100 - - collector to emitter breakdown voltage 2N6716 v (br)ceo 60 - - v i c =1ma, i b =0 2n6717 80 - - 2n6718 100 - - emitter to base br eakdown voltage v (br)ebo 5 - - v i e =1ma, i c =0 collector cut-off current 2N6716 i cbo - - 1 a v cb =60v, i e =0 2n6717 - - v cb =80v, i e =0 2n6718 - - v cb =100v, i e =0 emitter cut-off current 2N6716 i ebo - - 1 a v eb =5v, i c =0 2n6717 - - 2n6718 - - dc current gain h fe (1) * 80 - - v ce =1v, i c =50ma h fe (2) * 50 - 250 v ce =1v, i c =250ma h fe (3) * 20 - - v ce =1v, i c =500ma ? emitte r ? base ? collector to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
2N6716 / 2n6717 / 2n6718 1a , 100v npn plastic encapsulated transistor elektronische bauelemente 18-jan-2011 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. collector to emitter saturation voltage v ce(sat) * - - 0.5 v i c =250ma, i b =10ma - - 0.35 i c =250ma, i b =25ma base to emitter turn-on voltage v be(on) * - - 1.2 v v ce =1v, i c = 250ma collector to base capacitance c cb - - 30 pf v ce =10v, f=1mhz transition frequency f t 50 - 500 mhz v ce =10v, i c =50ma *pulse test.
2N6716 / 2n6717 / 2n6718 1a , 100v npn plastic encapsulated transistor elektronische bauelemente 18-jan-2011 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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